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Proceedings Paper

Terahertz oscillators using resonant tunneling diodes and their functions for various applications
Author(s): M. Asada; S. Suzuki
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Paper Abstract

Compact and coherent source is a key component for various applications of the terahertz wave. We report on our recent results of terahertz oscillators using resonant tunneling diodes (RTDs). The RTD is an InGaAs/AlAs double-barrier structure on InP substrate, and integrated with a planar slot antenna as a resonator and radiator. The output power is obtained from the substrate side through a Si lens. To achieve high-frequency oscillation, a narrow quantum well and an optimized collector spacer thickness were used. The former reduces the electron dwell time in the resonant tunneling region and the latter simultaneously reduces the electron transit time and the capacitance at the collector depletion region. The conduction loss of the slot antenna was also reduced with an optimized antenna length and an improved air bridge structure between the RTD and antenna. By these structures, fundamental oscillation up to 1.92 THz were obtained at room temperature. Oscillation above 2 THz is further expected in theoretical calculation. An oscillator with patch antenna, in which a Si lens is unnecessary, was fabricated. In a preliminary experiment, output power of 55 μW was obtained at 1 THz in a three-element array. Wireless data transmission using direct intensity modulation was demonstrated with the data rate of 30 Gbp/s and the bit error rate below the forward error correction limit. By integrating a varactor into the slot antenna, electrical frequency tuning was achieved with a tuning range of 580-900 GHz in an array device. Application of frequency-tunable RTD oscillators to measurements of absorption spectra was also demonstrated.

Paper Details

Date Published: 29 April 2016
PDF: 10 pages
Proc. SPIE 9856, Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense, 98560O (29 April 2016); doi: 10.1117/12.2225048
Show Author Affiliations
M. Asada, Tokyo Institute of Technology (Japan)
S. Suzuki, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 9856:
Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense
Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur, Editor(s)

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