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Proceedings Paper

EUV resists: What's next?
Author(s): Anna Lio
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Paper Abstract

The need to print smaller features and tighter pitches drives the development of new photolithography technologies. Extreme Ultraviolet Lithography (EUVL) at 13.5 nm wavelength is expected to provide considerable resolution gain over the current technology based on 193 nm wavelength. In this paper we assess the current status of EUV photoresists and their readiness for EUVL insertion into High Volume Manufacturing (HVM). In addition, we discuss the requirements that EUV photoresists will need to satisfy in the near and long term future.

Paper Details

Date Published: 18 March 2016
PDF: 14 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760V (18 March 2016); doi: 10.1117/12.2225017
Show Author Affiliations
Anna Lio, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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