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Proceedings Paper

Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films
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Paper Abstract

The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by molecular beam epitaxy. Hall measurements of electro-physical parameters of MCT samples after irradiation have shown that there is a layer of epitaxial films exhibiting n-type conductivity that is formed in the near-surface area. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. Also it is shown that the impact of the discharge leads to significant changes in electro-physical characteristics of MIS structures. This fact is demonstrated by increase in density of positive fixed charge, change in the hysteresis type of the capacitance-voltage characteristic, an increase in density of surface states. The preliminary results show that it is possible to use such actions in the development of technologies of the controlled change in the properties of MCT.

Paper Details

Date Published: 15 December 2015
PDF: 6 pages
Proc. SPIE 9810, International Conference on Atomic and Molecular Pulsed Lasers XII, 98100U (15 December 2015); doi: 10.1117/12.2224704
Show Author Affiliations
Denis V. Grigoryev, National Research Tomsk State Univ. (Russian Federation)
Alexandr V. Voitsekhovskii, National Research Tomsk State Univ. (Russian Federation)
Kirill A. Lozovoy, National Research Tomsk State Univ. (Russian Federation)
Sergey N. Nesmelov, National Research Tomsk State Univ. (Russian Federation)
Stanislav M. Dzyadukh, National Research Tomsk State Univ. (Russian Federation)
Viktor F. Tarasenko, Institute of High Current Electronics (Russian Federation)
Michail A. Shulepov, Institute of High Current Electronics (Russian Federation)
Sergei A. Dvoretskii, A.V. Rzhanov Institute of Semiconductor Physics (Russian Federation)


Published in SPIE Proceedings Vol. 9810:
International Conference on Atomic and Molecular Pulsed Lasers XII
Victor F. Tarasenko; Andrey M. Kabanov; Andrey M. Kabanov, Editor(s)

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