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Proceedings Paper

Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx
Author(s): Yu. M. Andreev; G. V. Lanskii; K. A. Kokh; V. A. Svetlichnyi
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Paper Abstract

Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency conversion of fs pulses into 6.5–35 μm and into 0.2–4.5 THz is realized. S-doped crystals demonstrated advantages from 50–70% in the first experiments up to 8.5–15 times in the following experiments depending on experimental conditions.

Paper Details

Date Published: 15 December 2015
PDF: 7 pages
Proc. SPIE 9810, International Conference on Atomic and Molecular Pulsed Lasers XII, 98101P (15 December 2015); doi: 10.1117/12.2224703
Show Author Affiliations
Yu. M. Andreev, Siberian Physical Technical Institute (Russian Federation)
Institute of Monitoring of Climate and Ecological Systems (Russian Federation)
G. V. Lanskii, Siberian Physical Technical Institute (Russian Federation)
Institute of Monitoring of Climate and Ecological Systems (Russian Federation)
K. A. Kokh, Siberian Physical Technical Institute (Russian Federation)
Institute of Geology and Mineralogy (Russian Federation)
V. A. Svetlichnyi, Siberian Physical Technical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 9810:
International Conference on Atomic and Molecular Pulsed Lasers XII
Victor F. Tarasenko; Andrey M. Kabanov; Andrey M. Kabanov, Editor(s)

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