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Proceedings Paper

Shallow etch electrical isolation in capacitively loaded Mach-Zehnder modulators
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Paper Abstract

To compensate for velocity mismatch in travelling wave opto-electronic devices, the microwave velocity of the propagating RF signal is reduced by introducing capacitively loaded elements. For high speed operation, these elements must be electrically isolated from one another, which is typically achieved by using ion-implantation to render the p-doped material non-conducting. We propose and demonstrate through optical and electrical simulations that ion-implantation can be avoided by using a quasi-shallow etch to electrically isolate the capacitive elements. High isolation can be achieved using such an etch without introducing additional losses to the propagating optical signal.

Paper Details

Date Published: 27 April 2016
PDF: 6 pages
Proc. SPIE 9889, Optical Modelling and Design IV, 988903 (27 April 2016); doi: 10.1117/12.2224583
Show Author Affiliations
Padraic E. Morrissey, Tyndall National Institute (Ireland)
Philip J. Marraccini, Tyndall National Institute (Ireland)
Moises A. Jezzini, Tyndall National Institute (Ireland)
Univ. College Cork (Ireland)
Frank H. Peters, Tyndall National Institute (Ireland)
Univ. College Cork (Ireland)


Published in SPIE Proceedings Vol. 9889:
Optical Modelling and Design IV
Frank Wyrowski; John T. Sheridan; Youri Meuret, Editor(s)

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