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Proceedings Paper

Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics
Author(s): A. C. Scofield; A. I. Hudson; B. L. Liang; N. P. Wells; D. L. Huffaker; W. T. Lotshaw
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Paper Abstract

We use steady-state and time-resolved spectroscopy to evaluate optoelectronic material quality and obtain detailed information about carrier generation, transport, and relaxation in semiconductor devices and test structures. This report focuses on time-resolved and steady-state photoluminescence of III-V reference heterostructures at temperatures between 4K and 300K in order to investigate the mechanisms limiting carrier lifetime and to develop the capability to provide actionable feedback to research-and-development efforts for improvement and optimization of material properties and/or device performance. We combine the results of photoluminescence experiments with model-based analyses and simulations of carrier relaxation to assess the impacts of defects and interface quality on the relaxation dynamics of photo-generated carriers in double heterostructure test vehicles grown by MOCVD and MBE.

Paper Details

Date Published: 13 May 2016
PDF: 7 pages
Proc. SPIE 9835, Ultrafast Bandgap Photonics, 98350F (13 May 2016); doi: 10.1117/12.2224308
Show Author Affiliations
A. C. Scofield, The Aerospace Corp. (United States)
A. I. Hudson, The Aerospace Corp. (United States)
B. L. Liang, Univ. of California, Los Angeles (United States)
N. P. Wells, The Aerospace Corp. (United States)
D. L. Huffaker, Univ. of California, Los Angeles (United States)
W. T. Lotshaw, The Aerospace Corp. (United States)


Published in SPIE Proceedings Vol. 9835:
Ultrafast Bandgap Photonics
Michael K. Rafailov; Eric Mazur, Editor(s)

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