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Proceedings Paper

Development of silicon single-photon avalanche diode at Voxtel Inc.
Author(s): Vinit Dhulla; Drake Miller; Dumitru Mitaru-Berceanu; Grigory Kogan
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Paper Abstract

In this paper we present the results of electrical and optical characterization of silicon single-photon avalanche diode (SPAD) development at Voxel Inc. Measurements are made on a 40 x 40 SPAD array test chip with column readout, inpixel integrated active quenching circuit, and pixel enable/disable circuit and ability to control dead time from 37 ns to 1.5 μs. The pixel pitch is 35 micrometers and includes three different SPADs with active-area diameters of 8 micrometers, 10 micrometers, and 14 micrometers. The realized SPADs have a breakdown voltage of 22.5 V with peak-to-peak variation of less than 36 mV across the array. At room temperature, with 10% over-bias the DCR is only 0.22 Hz/μm2. The SPADs have a sensitive range of 400 – 900 nm, with a peak photon-detection probability of 23% at 500 nm. After-pulsing and crosstalk are within the noise fluctuation of the SPAD and are not significant.

Paper Details

Date Published: 5 May 2016
PDF: 7 pages
Proc. SPIE 9858, Advanced Photon Counting Techniques X, 98580B (5 May 2016); doi: 10.1117/12.2224283
Show Author Affiliations
Vinit Dhulla, Voxtel Inc. (United States)
Drake Miller, Voxtel Inc. (United States)
Dumitru Mitaru-Berceanu, Voxtel Inc. (United States)
Grigory Kogan, Voxtel Inc. (United States)


Published in SPIE Proceedings Vol. 9858:
Advanced Photon Counting Techniques X
Mark A. Itzler; Joe C. Campbell, Editor(s)

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