Share Email Print
cover

Proceedings Paper

Development of silicon single-photon avalanche diode at Voxtel Inc.
Author(s): Vinit Dhulla; Drake Miller; Dumitru Mitaru-Berceanu; Grigory Kogan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper we present the results of electrical and optical characterization of silicon single-photon avalanche diode (SPAD) development at Voxel Inc. Measurements are made on a 40 x 40 SPAD array test chip with column readout, inpixel integrated active quenching circuit, and pixel enable/disable circuit and ability to control dead time from 37 ns to 1.5 μs. The pixel pitch is 35 micrometers and includes three different SPADs with active-area diameters of 8 micrometers, 10 micrometers, and 14 micrometers. The realized SPADs have a breakdown voltage of 22.5 V with peak-to-peak variation of less than 36 mV across the array. At room temperature, with 10% over-bias the DCR is only 0.22 Hz/μm2. The SPADs have a sensitive range of 400 – 900 nm, with a peak photon-detection probability of 23% at 500 nm. After-pulsing and crosstalk are within the noise fluctuation of the SPAD and are not significant.

Paper Details

Date Published: 5 May 2016
PDF: 7 pages
Proc. SPIE 9858, Advanced Photon Counting Techniques X, 98580B (5 May 2016); doi: 10.1117/12.2224283
Show Author Affiliations
Vinit Dhulla, Voxtel Inc. (United States)
Drake Miller, Voxtel Inc. (United States)
Dumitru Mitaru-Berceanu, Voxtel Inc. (United States)
Grigory Kogan, Voxtel Inc. (United States)


Published in SPIE Proceedings Vol. 9858:
Advanced Photon Counting Techniques X
Mark A. Itzler; Joe C. Campbell, Editor(s)

© SPIE. Terms of Use
Back to Top