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Proceedings Paper

Numerical approaches for predicting two-photon absorption induced single-event effects in semiconductors
Author(s): Joel M. Hales; Ani Khachatrian; Nicolas J.-H. Roche; Stephen Buchner; Jeffrey Warner; Dale McMorrow
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Paper Abstract

Two numerical approaches for determining the charge generated in semiconductors via two-photon absorption (2PA) under conditions relevant for laser-based single-event effects (SEE) experiments are presented. The first approach uses a simple analytical expression incorporating a small number of experimental/material parameters while the second approach employs a comprehensive beam propagation method that accounts for all the complex nonlinear optical (NLO) interactions present. The impact of the excitation conditions, device geometry, and specific NLO interactions on the resulting collected charge in silicon devices is also discussed. These approaches can provide value to the radiation-effects community by predicting the impacts that varying experimental parameters will have on 2PA SEE measurements.

Paper Details

Date Published: 13 May 2016
PDF: 7 pages
Proc. SPIE 9835, Ultrafast Bandgap Photonics, 98350B (13 May 2016); doi: 10.1117/12.2223847
Show Author Affiliations
Joel M. Hales, U.S. Naval Research Lab. (United States)
Sotera Defense Solutions, Inc. (United States)
Ani Khachatrian, U.S. Naval Research Lab. (United States)
Sotera Defense Solutions, Inc. (United States)
Nicolas J.-H. Roche, U.S. Naval Research Lab. (United States)
The George Washington Univ. (United States)
Stephen Buchner, U.S. Naval Research Lab. (United States)
Jeffrey Warner, U.S. Naval Research Lab. (United States)
Dale McMorrow, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 9835:
Ultrafast Bandgap Photonics
Michael K. Rafailov; Eric Mazur, Editor(s)

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