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Proceedings Paper

Type II superlattice technology for LWIR detectors
Author(s): P. C. Klipstein; E. Avnon; D. Azulai; Y. Benny; R. Fraenkel; A. Glozman; E. Hojman; O. Klin; L. Krasovitsky; L. Langof; I. Lukomsky; M. Nitzani; I. Shtrichman; N. Rappaport; N. Snapi; E. Weiss; A. Tuito
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Paper Abstract

SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD’s new 15 μm pitch “Pelican-D LW” type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD’s MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

Paper Details

Date Published: 20 May 2016
PDF: 10 pages
Proc. SPIE 9819, Infrared Technology and Applications XLII, 98190T (20 May 2016); doi: 10.1117/12.2222776
Show Author Affiliations
P. C. Klipstein, SemiConductor Devices (Israel)
E. Avnon, SemiConductor Devices (Israel)
D. Azulai, SemiConductor Devices (Israel)
Y. Benny, SemiConductor Devices (Israel)
R. Fraenkel, SemiConductor Devices (Israel)
A. Glozman, SemiConductor Devices (Israel)
E. Hojman, SemiConductor Devices (Israel)
O. Klin, SemiConductor Devices (Israel)
L. Krasovitsky, Semiconductor Devices (Israel)
L. Langof, SemiConductor Devices (Israel)
I. Lukomsky, SemiConductor Devices (Israel)
M. Nitzani, SemiConductor Devices (Israel)
I. Shtrichman, SemiConductor Devices (Israel)
N. Rappaport, SemiConductor Devices (Israel)
N. Snapi, SemiConductor Devices (Israel)
E. Weiss, SemiConductor Devices (Israel)
A. Tuito, Israel Ministry of Defense (Israel)

Published in SPIE Proceedings Vol. 9819:
Infrared Technology and Applications XLII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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