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Proceedings Paper

Benchmarking study of EUV resists for NXE:3300B
Author(s): Yu-Jen Fan; Mac Mellish; Jun Sung Chun; Scott McWilliams; Cecilia A Montgomery; Warren Montgomery
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Paper Abstract

EUV lithographers have continued to reduce the barriers to high Volume Manufacturing (HVM) introduction. Tool, mask and photoresist manufacturers have made excellent progress on several fronts, including resolution of many EUV source related issues, resists for early imaging characterization, and defect inspection tooling. In this discussion, we will focus on photoresist development. For many years, the team at SUNY Polytechnic Institute (SUNY Poly) has provided results from a neutral photoresist benchmarking study, which has been quite useful in establishing the limits of currently available photoresist systems [1-5]. New photoresist systems are being developed with improving resolution, but they also have lower coated thicknesses. In an effort to continue to point out potential lithographic problem areas, SUNY Poly has been evaluating the ‘etch compatibility’ of the best performing photoresists available in order to determine if the decreasing aspect ratios would prove a detriment to etch performance. In this paper, we will show data from our most recent benchmark study. We will also include smoothing process results, as well as some post-etch results obtained using the NXE:3300B resident on the SUNY Poly campus.

Paper Details

Date Published: 4 April 2016
PDF: 11 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760W (4 April 2016); doi: 10.1117/12.2222065
Show Author Affiliations
Yu-Jen Fan, SUNY Polytechnic Institute (United States)
SUNY Poly SEMATECH (United States)
Mac Mellish, SUNY Poly SEMATECH (United States)
Jun Sung Chun, SUNY Polytechnic Institute (United States)
Scott McWilliams, SUNY Polytechnic Institute (United States)
SUNY Poly SEMATECH (United States)
Cecilia A Montgomery, SUNY Polytechnic Institute (United States)
SUNY Poly SEMATECH (United States)
Warren Montgomery, SUNY Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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