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Proceedings Paper

SEM based overlay measurement between resist and buried patterns
Author(s): Osamu Inoue; Yutaka Okagawa; Kazuhisa Hasumi; Chuanyu Shao; Philippe Leray; Sandip Halder; Gian Lorusso; Bart Baudemprez
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Paper Abstract

With the continuous shrink in pattern size and increased density, overlay control has become one of the most critical issues in semiconductor manufacturing. Recently, SEM based overlay of AEI (After Etch Inspection) wafer has been used for reference and optimization of optical overlay (both Image Based Overlay (IBO) and Diffraction Based Overlay (DBO)). Overlay measurement at AEI stage contributes monitor and forecast the yield after formation by etch and calibrate optical measurement tools. however those overlay value seems difficult directly for feedback to a scanner. Therefore, there is a clear need to have SEM based overlay measurements of ADI (After Develop Inspection) wafers in order to serve as reference for optical overlay and make necessary corrections before wafers go to etch. Furthermore, to make the corrections as accurate as possible, actual device like feature dimensions need to be measured post ADI. This device size measurement is very unique feature of CDSEM , which can be measured with smaller area. This is currently possible only with the CD-SEM. This device size measurement is very unique feature of CD-SEM , which can be measured with smaller area. In this study, we assess SEM based overlay measurement of ADI and AEI wafer by using a sample from an N10 process flow. First, we demonstrate SEM based overlay performance at AEI by using dual damascene process for Via 0 (V0) and metal 1 (M1) layer. We also discuss the overlay measurements between litho-etch-litho stages of a triple patterned M1 layer and double pattern V0. Second, to illustrate the complexities in image acquisition and measurement we will measure overlay between M1B resist and buried M1A-Hard mask trench. Finally, we will show how high accelerating voltage can detect buried pattern information by BSE (Back Scattering Electron). In this paper we discuss the merits of this method versus standard optical metrology based corrections.

Paper Details

Date Published: 27 April 2016
PDF: 9 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781D (27 April 2016); doi: 10.1117/12.2221910
Show Author Affiliations
Osamu Inoue, Hitachi High-Technologies Corp. (Japan)
Yutaka Okagawa, Hitachi High-Technologies Corp. (Japan)
Kazuhisa Hasumi, Hitachi High-Technologies Corp. (Japan)
Chuanyu Shao, Hitachi High-Technologies Corp. (Japan)
Philippe Leray, IMEC (Belgium)
Sandip Halder, IMEC (Belgium)
Gian Lorusso, IMEC (Belgium)
Bart Baudemprez, IMEC (Belgium)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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