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Proceedings Paper

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections
Author(s): Michael Kubis; Rich Wise; Liesbeth Reijnen; Katja Viatkina; Patrick Jaenen; Melisa Luca; Guillaume Mernier; Charlotte Chahine; David Hellin; Benjamin Kam; Daniel Sobieski; Johan Vertommen; Jan Mulkens; Mircea Dusa; Girish Dixit; Nader Shamma; Philippe Leray
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Paper Abstract

With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

Paper Details

Date Published: 15 March 2016
PDF: 8 pages
Proc. SPIE 9780, Optical Microlithography XXIX, 978007 (15 March 2016); doi: 10.1117/12.2220591
Show Author Affiliations
Michael Kubis, ASML Netherlands B.V. (Netherlands)
Rich Wise, Lam Research Corp. (United States)
Liesbeth Reijnen, ASML Netherlands B.V. (Netherlands)
Katja Viatkina, ASML Netherlands B.V. (Netherlands)
Patrick Jaenen, IMEC (Belgium)
Melisa Luca, ASML Netherlands B.V. (Netherlands)
Guillaume Mernier, ASML Netherlands B.V. (Netherlands)
Charlotte Chahine, ASML Netherlands B.V. (Netherlands)
David Hellin, Lam Research Corp. (United States)
Benjamin Kam, Lam Research Corp. (United States)
Daniel Sobieski, Lam Research Corp. (United States)
Johan Vertommen, Lam Research Corp. (United States)
Jan Mulkens, ASML Netherlands B.V. (Netherlands)
Mircea Dusa, ASML Netherlands B.V. (Netherlands)
Girish Dixit, Lam Research Corp. (United States)
Nader Shamma, Lam Research Corp. (United States)
Philippe Leray, IMEC (Belgium)


Published in SPIE Proceedings Vol. 9780:
Optical Microlithography XXIX
Andreas Erdmann; Jongwook Kye, Editor(s)

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