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Proceedings Paper

Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
Author(s): Raja Muthinti; Nicolas Loubet; Robin Chao; John Ott; Michael Guillorn; Nelson Felix; John Gaudiello; Parker Lund; Aron Cepler; Matthew Sendelbach; Oded Cohen; Shay Wolfling; Cornel Bozdog; Mark Klare
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Paper Abstract

Gate-all-around (GAA) nanowire (NW) devices have long been acknowledged as the ultimate device from an electrostatic scaling point of view. The GAA architecture offers improved short channel effect (SCE) immunity compared to single and double gate planar, FinFET, and trigate structures. One attractive proposal for making GAA devices involves the use of a multilayer fin-like structure consisting of layers of Si and SiGe. However, such structures pose various metrology challenges, both geometrical and material. Optical Scatterometry, also called optical critical dimension (OCD) is a fast, accurate and non-destructive in-line metrology technique well suited for GAA integration challenges. In this work, OCD is used as an enabler for the process development of nanowire devices, extending its abilities to learn new material and process aspects specific to this novel device integration. The specific metrology challenges from multiple key steps in the process flow are detailed, along with the corresponding OCD solutions and results. In addition, Low Energy X-Ray Fluorescence (LE-XRF) is applied to process steps before and after the removal of the SiGe layers in order to quantify the amount of Ge present at each step. These results are correlated to OCD measurements of the Ge content, demonstrating that both OCD and LE-XRF are sensitive to Ge content for these applications.

Paper Details

Date Published: 29 March 2016
PDF: 8 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977810 (29 March 2016); doi: 10.1117/12.2220379
Show Author Affiliations
Raja Muthinti, IBM Research (United States)
Albany Nanotech (United States)
Nicolas Loubet, IBM Research (United States)
Albany Nanotech (United States)
Robin Chao, IBM Research (United States)
Albany Nanotech (United States)
John Ott, IBM Research (United States)
Albany Nanotech (United States)
Michael Guillorn, IBM Research (United States)
Albany Nanotech (United States)
Nelson Felix, IBM Research (United States)
Albany Nanotech (United States)
John Gaudiello, IBM Research (United States)
Albany Nanotech (United States)
Parker Lund, Nova Measuring Instruments, Inc. (United States)
Aron Cepler, Nova Measuring Instruments, Inc. (United States)
Matthew Sendelbach, Nova Measuring Instruments, Inc. (United States)
Oded Cohen, Nova Measuring Instruments, LTD (Israel)
Shay Wolfling, Nova Measuring Instruments, LTD (Israel)
Cornel Bozdog, ReVera (United States)
Mark Klare, ReVera (United States)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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