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Proceedings Paper

Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM
Author(s): Ardavan Zandiatashbar; Patrick A. Taylor; Byong Kim; Young-kook Yoo; Keibock Lee; Ahjin Jo; Ju Suk Lee; Sang-Joon Cho; Sang-il Park
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Paper Abstract

Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM’s low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn’t be properly sized by the LLS due to the very shallow depth and low light scattering. Likewise, SEM cannot be used effectively for post-inspection defect review and classification of these very shallow types of defects. To verify and obtain accurate shape and three-dimensional information of those defects, automatic defect review AFM (ADR AFM) is utilized for accurate locating and imaging of DOI. In ADR AFM, non-contact mode imaging is used for non-destructive characterization and preserving tip sharpness for data repeatability and reproducibility. Locating DOI and imaging are performed automatically with a throughput of many defects per hour. Topography images of DOI has been collected and compared with SEM images. The ADR AFM has been shown as a non-destructive metrology tool for defect review and obtaining three-dimensional topography information.

Paper Details

Date Published: 8 March 2016
PDF: 9 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782P (8 March 2016); doi: 10.1117/12.2220369
Show Author Affiliations
Ardavan Zandiatashbar, Park Systems Inc. (United States)
Patrick A. Taylor, SunEdison Semiconductor (United States)
Byong Kim, Park Systems Inc. (United States)
Young-kook Yoo, Park Systems Inc. (United States)
Keibock Lee, Park Systems Inc. (United States)
Ahjin Jo, Park Systems Corp. (Korea, Republic of)
Ju Suk Lee, Park Systems Corp. (Korea, Republic of)
Sang-Joon Cho, Park Systems Corp. (Korea, Republic of)
Sang-il Park, Park Systems Corp. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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