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Proceedings Paper

Incorporating photomask shape uncertainty in computational lithography
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Paper Abstract

The lithographic performance of a photomask is sensitive to shape uncertainty caused by manufacturing and measurement errors. This work proposes incorporating the photomask shape uncertainty in computational lithography such as inverse lithography. The shape uncertainty of the photomask is quantitatively modeled as a random field in a level-set method framework. With this, the shape uncertainty can be characterized by several parameters, making it computationally tractable to be incorporated in inverse lithography technique (ILT). Simulations are conducted to show the effectiveness of using this method to represent various kinds of shape variations. It is also demonstrated that incorporating the shape variation in ILT can reduce the mask error enhancement factor (MEEF) values of the optimized patterns, and improve the robustness of imaging performance against mask shape fluctuation.

Paper Details

Date Published: 15 March 2016
PDF: 10 pages
Proc. SPIE 9780, Optical Microlithography XXIX, 97800Q (15 March 2016); doi: 10.1117/12.2220278
Show Author Affiliations
Xiaofei Wu, The Univ. of Hong Kong (Hong Kong, China)
Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Shiyuan Liu, Huazhong Univ. of Science and Technology (China)
Andreas Erdmann, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Edmund Y. Lam, The Univ. of Hong Kong (Hong Kong, China)


Published in SPIE Proceedings Vol. 9780:
Optical Microlithography XXIX
Andreas Erdmann; Jongwook Kye, Editor(s)

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