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Proceedings Paper

EUV patterning successes and frontiers
Author(s): Nelson Felix; Dan Corliss; Karen Petrillo; Nicole Saulnier; Yongan Xu; Luciana Meli; Hao Tang; Anuja De Silva; Bassem Hamieh; Martin Burkhardt; Yann Mignot; Richard Johnson; Chris Robinson; Mary Breton; Indira Seshadri; Derren Dunn; Stuart Sieg; Eric Miller; Genevieve Beique; Andre Labonte; Lei Sun; Geng Han; Erik Verduijn; Eunshoo Han; Bong Cheol Kim; Jongsu Kim; Koichi Hontake; Lior Huli; Corey Lemley; Dave Hetzer; Shinichiro Kawakami; Koichi Matsunaga
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Paper Abstract

The feature scaling and patterning control required for the 7nm node has introduced EUV as a candidate lithography technology for enablement. To be established as a front-up lithography solution for those requirements, all the associated aspects with yielding a technology are also in the process of being demonstrated, such as defectivity process window through patterning transfer and electrical yield. This paper will review the current status of those metrics for 7nm at IBM, but also focus on the challenges therein as the industry begins to look beyond 7nm. To address these challenges, some of the fundamental process aspects of holistic EUV patterning are explored and characterized. This includes detailing the contrast entitlement enabled by EUV, and subsequently characterizing state-of-the-art resist printing limits to realize that entitlement. Because of the small features being considered, the limits of film thinness need to be characterized, both for the resist and underlying SiARC or inorganic hardmask, and the subsequent defectivity, both of the native films and after pattern transfer. Also, as we prepare for the next node, multipatterning techniques will be validated in light of the above, in a way that employs the enabling aspects of EUV as well. This will thus demonstrate EUV not just as a technology that can print small features, but one where all aspects of the patterning are understood and enabling of a manufacturing-worthy technology.

Paper Details

Date Published: 18 March 2016
PDF: 7 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761O (18 March 2016); doi: 10.1117/12.2219894
Show Author Affiliations
Nelson Felix, IBM Corp. (United States)
Dan Corliss, IBM Corp. (United States)
Karen Petrillo, IBM Corp. (United States)
Nicole Saulnier, IBM Corp. (United States)
Yongan Xu, IBM Corp. (United States)
Luciana Meli, IBM Corp. (United States)
Hao Tang, IBM Corp. (United States)
Anuja De Silva, IBM Corp. (United States)
Bassem Hamieh, IBM Corp. (United States)
Martin Burkhardt, IBM Corp. (United States)
Yann Mignot, IBM Corp. (United States)
Richard Johnson, IBM Corp. (United States)
Chris Robinson, IBM Corp. (United States)
Mary Breton, IBM Corp. (United States)
Indira Seshadri, IBM Corp. (United States)
Derren Dunn, IBM Corp. (United States)
Stuart Sieg, IBM Corp. (United States)
Eric Miller, IBM Corp. (United States)
Genevieve Beique, GLOBALFOUNDRIES Inc. (United States)
Andre Labonte, GLOBALFOUNDRIES Inc. (United States)
Lei Sun, GLOBALFOUNDRIES Inc. (United States)
Geng Han, GLOBALFOUNDRIES Inc. (United States)
Erik Verduijn, GLOBALFOUNDRIES Inc. (United States)
Eunshoo Han, SAMSUNG Electronics Co., Ltd. (United States)
Bong Cheol Kim, SAMSUNG Electronics Co., Ltd. (United States)
Jongsu Kim, SAMSUNG Electronics Co., Ltd. (United States)
Koichi Hontake, TEL Technology Ctr., America, LLC (United States)
Lior Huli, TEL Technology Ctr., America, LLC (United States)
Corey Lemley, TEL Technology Ctr., America, LLC (United States)
Dave Hetzer, TEL Technology Ctr., America, LLC (United States)
Shinichiro Kawakami, TEL Technology Ctr., America, LLC (United States)
Koichi Matsunaga, TEL Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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