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Proceedings Paper

Lithographic qualification of high-transmission mask blank for 10nm node and beyond
Author(s): Yongan Xu; Tom Faure; Ramya Viswanathan; Granger Lobb; Richard Wistrom; Sean Burns; Lin Hu; Ioana Graur; Ben Bleiman; Dan Fischer; Yann Mignot; Yoshifumi Sakamoto; Yusuke Toda; John Bolton; Todd Bailey; Nelson Felix; John Arnold; Matthew Colburn
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Paper Abstract

In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.

Paper Details

Date Published: 1 April 2016
PDF: 14 pages
Proc. SPIE 9780, Optical Microlithography XXIX, 978006 (1 April 2016); doi: 10.1117/12.2219778
Show Author Affiliations
Yongan Xu, IBM Corp. (United States)
Tom Faure, GLOBALFOUNDRIES Inc. (United States)
Ramya Viswanathan, GLOBALFOUNDRIES Inc. (United States)
Granger Lobb, GLOBALFOUNDRIES Inc. (United States)
Richard Wistrom, GLOBALFOUNDRIES Inc. (United States)
Sean Burns, IBM Corp. (United States)
Lin Hu, GLOBALFOUNDRIES Inc. (United States)
Ioana Graur, GLOBALFOUNDRIES Inc. (United States)
Ben Bleiman, IBM Corp. (United States)
Dan Fischer, GLOBALFOUNDRIES Inc. (United States)
Yann Mignot, IBM Corp. (United States)
Yoshifumi Sakamoto, Toppan Printing Co., Ltd. (Japan)
Yusuke Toda, Toppan Printing Co., Ltd. (Japan)
John Bolton, GLOBALFOUNDRIES Inc. (United States)
Todd Bailey, GLOBALFOUNDRIES Inc. (United States)
Nelson Felix, IBM Corp. (United States)
John Arnold, IBM Corp. (United States)
Matthew Colburn, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 9780:
Optical Microlithography XXIX
Andreas Erdmann; Jongwook Kye, Editor(s)

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