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Proceedings Paper

Improving OCD time to solution using Signal Response Metrology
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Paper Abstract

In recent technology nodes, advanced process and novel integration scheme have challenged the precision limits of conventional metrology; with critical dimensions (CD) of device reduce to sub-nanometer region. Optical metrology has proved its capability to precisely detect intricate details on the complex structures, however, conventional RCWA-based (rigorous coupled wave analysis) scatterometry has the limitations of long time-to-results and lack of flexibility to adapt to wide process variations. Signal Response Metrology (SRM) is a new metrology technique targeted to alleviate the consumption of engineering and computation resources by eliminating geometric/dispersion modeling and spectral simulation from the workflow. This is achieved by directly correlating the spectra acquired from a set of wafers with known process variations encoded. In SPIE 2015, we presented the results of SRM application in lithography metrology and control [1], accomplished the mission of setting up a new measurement recipe of focus/dose monitoring in hours. This work will demonstrate our recent field exploration of SRM implementation in 20nm technology and beyond, including focus metrology for scanner control; post etch geometric profile measurement, and actual device profile metrology.

Paper Details

Date Published: 24 March 2016
PDF: 10 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977806 (24 March 2016); doi: 10.1117/12.2219775
Show Author Affiliations
Fang Fang, GLOBALFOUNDRIES (United States)
Xiaoxiao Zhang, GLOBALFOUNDRIES (United States)
Alok Vaid, GLOBALFOUNDRIES (United States)
Stilian Pandev, KLA-Tencor Corp. (United States)
Dimitry Sanko, KLA-Tencor Corp. (United States)
Vidya Ramanathan, KLA-Tencor Corp. (United States)
Kartik Venkataraman, KLA-Tencor Corp. (United States)
Ronny Haupt, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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