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Proceedings Paper

3D mask effects of absorber geometry in EUV lithography systems
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Paper Abstract

The non-zero chief ray angle at the object (CRAO) in EUVL systems introduces azimuthally asymmetric phase shifts. Understanding and characterizing these effects is critical to EUVL system and mask design. The effects of 3D mask absorber geometry on diffraction phase were examined through rigorous simulation. The diffraction phase distribution was split into even and odd components to enable analogies between the well-known effects of lens aberrations and EUV 3D mask effects. Specifically, this analysis reveals that the odd component of the phase distribution is non-zero in off-axis optical systems. We have found that 3D mask effects in EUVL systems can be partially compensated in the pupil plane to minimize aerial image effects, such as best focus shifts, horizontal-vertical CD bias, and image placement error.

Paper Details

Date Published: 18 March 2016
PDF: 8 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760F (18 March 2016); doi: 10.1117/12.2219708
Show Author Affiliations
Riaz R. Haque, Rochester Institute of Technology (United States)
Zac Levinson, Rochester Institute of Technology (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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