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Proceedings Paper

DSA via hole shrink for advanced node applications
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Paper Abstract

Directed self-assembly (DSA) of block copolymers (BCPs) has become a promising patterning technique for 7nm node hole shrink process due to its material-controlled CD uniformity and process simplicity.[1] For such application, cylinder-forming BCP system has been extensively investigated compared to its counterpart, lamella-forming system, mainly because cylindrical BCPs will form multiple vias in non-circular guiding patterns (GPs), which is considered to be closer to technological needs.[2-5] This technological need to generate multiple DSA domains in a bar-shape GP originated from the resolution limit of lithography, i.e. those vias placed too close to each other will merge and short the circuit. In practice, multiple patterning and self-aligned via (SAV) processes have been implemented in semiconductor manufacturing to address this resolution issue.[6] The former approach separates one pattern layer with unresolvable dense features into several layers with resolvable features, while the latter approach simply utilizes the superposition of via bars and the pre-defined metal trench patterns in a thin hard mask layer to resolve individual vias, as illustrated in Fig 1 (upper). With proper design, using DSA to generate via bars with the SAV process could provide another approach to address the resolution issue.

Paper Details

Date Published: 4 April 2016
PDF: 9 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97770L (4 April 2016); doi: 10.1117/12.2219706
Show Author Affiliations
Cheng Chi, IBM Research - Albany NanoTechnology (United States)
Chi-Chun Liu, IBM Research - Albany NanoTechnology (United States)
Luciana Meli, IBM Research - Albany NanoTechnology (United States)
Kristin Schmidt, IBM Research - Almaden (United States)
Yongan Xu, IBM Research - Albany NanoTechnology (United States)
Ekmini Anuja DeSilva, IBM Research - Albany NanoTechnology (United States)
Martha Sanchez, IBM Research - Almaden (United States)
Richard Farrell, TEL Technology Ctr., America, LLC (United States)
Hongyun Cottle, TEL Technology Ctr., America, LLC (United States)
Daiji Kawamura, JSR Micro, Inc. (United States)
Lovejeet Singh, JSR Micro, Inc. (United States)
Tsuyoshi Furukawa, JSR Micro, Inc. (United States)
Kafai Lai, IBM Research - Albany NanoTechnology (United States)
Jed W. Pitera, IBM Research - Almaden (United States)
Daniel Sanders, IBM Research - Almaden (United States)
IBM Corp. (United States)
David R. Hetzer, TEL Technology Ctr., America, LLC (United States)
Andrew Metz, TEL Technology Ctr., America, LLC (United States)
(United States)
Nelson Felix, IBM Research - Albany NanoTechnology (United States)
John Arnold, IBM Research - Albany NanoTechnology (United States)
Matthew Colburn, IBM Research - Albany NanoTechnology (United States)


Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

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