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Proceedings Paper

DSA patterning options for FinFET formation at 7nm node
Author(s): Chi-Chun Charlie Liu; Elliott Franke; Fee Li Lie; Stuart Sieg; Hsinyu Tsai; Kafai Lai; Hoa Truong; Richard Farrell; Mark Somervell; Daniel Sanders; Nelson Felix; Michael Guillorn; Sean Burns; David Hetzer; Akiteru Ko; John Arnold; Matthew Colburn
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Paper Abstract

Several 27nm-pitch directed self-assembly (DSA) processes targeting fin formation for FinFET device fabrication are studied in a 300mm pilot line environment, including chemoepitaxy for a conventional Fin arrays, graphoepitaxy for a customization approach and a hybrid approach for self-aligned Fin cut. The trade-off between each DSA flow is discussed in terms of placement error, Fin CD/profile uniformity, and restricted design. Challenges in pattern transfer are observed and process optimization are discussed. Finally, silicon Fins with 100nm depth and on-target CD using different DSA options with either lithographic or self-aligned customization approach are demonstrated.

Paper Details

Date Published: 22 March 2016
PDF: 15 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97770R (22 March 2016); doi: 10.1117/12.2219670
Show Author Affiliations
Chi-Chun Charlie Liu, IBM Research - Albany NanoTech (United States)
Elliott Franke, TEL Technology Ctr., America, LLC (United States)
Fee Li Lie, IBM Research - Albany NanoTech (United States)
Stuart Sieg, IBM Research - Albany NanoTech (United States)
Hsinyu Tsai, IBM Research - T. J. Watson (United States)
Kafai Lai, IBM Research - Albany NanoTech (United States)
Hoa Truong, IBM Research - Almaden (United States)
Richard Farrell, TEL Technology Ctr., America, LLC (United States)
Mark Somervell, Tokyo Electron America, Inc. (United States)
Daniel Sanders, IBM Research - Albany NanoTech (United States)
Nelson Felix, IBM Research - Albany NanoTech (United States)
Michael Guillorn, IBM Research - Albany NanoTech (United States)
Sean Burns, IBM Research - Albany NanoTech (United States)
David Hetzer, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)
John Arnold, IBM Research - Albany NanoTech (United States)
Matthew Colburn, IBM Research - Albany NanoTech (United States)


Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

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