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Proceedings Paper

Comparison of left and right side line edge roughness in lithography
Author(s): Lei Sun; Nicole Saulnier; Genevieve Beique; Erik Verduijn; Wenhui Wang; Yongan Xu; Hao Tang; Yulu Chen; Ryoung-han Kim; John Arnold; Nelson Felix; Matthew Colburn
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Paper Abstract

The left side and right side line edge roughnesses (LER) of a line are compared for different conditions, such as through pitch, through critical dimension (CD), from horizontal to vertical line direction, from litho to etch. The investigation shows that the left and right side LER from lithography process are the same, however, the metrology can cause a 4-25% increase in the measured right side LER. The LER difference is related to the CDSEM e-beam scan direction.

Paper Details

Date Published: 18 March 2016
PDF: 9 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977822 (18 March 2016); doi: 10.1117/12.2219665
Show Author Affiliations
Lei Sun, GLOBALFOUNDRIES (United States)
Nicole Saulnier, IBM (United States)
Genevieve Beique, GLOBALFOUNDRIES (United States)
Erik Verduijn, GLOBALFOUNDRIES (United States)
Wenhui Wang, GLOBALFOUNDRIES (United States)
Yongan Xu, IBM (United States)
Hao Tang, IBM (United States)
Yulu Chen, GLOBALFOUNDRIES (United States)
Ryoung-han Kim, GLOBALFOUNDRIES (United States)
John Arnold, IBM (United States)
Nelson Felix, IBM (United States)
Matthew Colburn, IBM (United States)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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