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Proceedings Paper

Feasibility of a new absorber material for high NA extreme ultraviolet lithography
Author(s): Ki-Ho Ko; Hye-Keun Oh
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Paper Abstract

The extreme-ultraviolet lithography (EUVL) has been regarded as the best candidate to achieve high resolution patterning below 1x nm node. From the Rayleigh criterion, a numerical aperture (NA) should be increased to make the high resolution pattern. A new absorber structure which has sufficient image contrast and small height is needed for realization of high NA optics. In this study, 28 nm-thick ruthenium oxide (RuO2) is suggested for the absorber material. We could obtain higher image contrast and better H-V bias by using the RuO2 absorber compared to the other materials such as TaN and TaBN.

Paper Details

Date Published: 18 March 2016
PDF: 6 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97762J (18 March 2016); doi: 10.1117/12.2219576
Show Author Affiliations
Ki-Ho Ko, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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