Share Email Print
cover

Proceedings Paper

Investigation on the relationship between CD and CDU in memory devices
Author(s): Jeongsu Park; Daewoo Kim; Keunjun Kim; Choidong Kim; Sungkoo Lee; Hyeongsoo Kim
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

As pattern design rule of device shrinks, CD control becomes more critical and important especially for resistance devices. As CD (Critical Dimension) increases, CDU (Critical Dimension Uniformity) becomes worse generally. The question with this relationship is a starting point of our study. Mainly we focused on two points. One is which factor affects CDU. The other is whether CDU degradation with large CD happens at all cases or not. We have analyzed with simulation and experiment results about CDU with splitted mask layout CD under limited conditions such as same equipment, illumination and exposure dose. As a result, we will show the relationship between CD size and CDU.

Paper Details

Date Published: 18 March 2016
PDF: 8 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782T (18 March 2016); doi: 10.1117/12.2219569
Show Author Affiliations
Jeongsu Park, SK Hynix (Korea, Republic of)
Daewoo Kim, SK Hynix (Korea, Republic of)
Keunjun Kim, SK Hynix (Korea, Republic of)
Choidong Kim, SK Hynix (Korea, Republic of)
Sungkoo Lee, SK Hynix (Korea, Republic of)
Hyeongsoo Kim, SK Hynix (Korea, Republic of)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

© SPIE. Terms of Use
Back to Top