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Proceedings Paper

Process window and defect monitoring using high-throughput e-beam inspection guided by computational hot spot detection
Author(s): Fei Wang; Pengcheng Zhang; Wei Fang; Kevin Liu; Jack Jau; Lester Wang; Alex Wan; Stefan Hunsche; Sandip Halder; Philippe Leray
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Paper Abstract

As design rules for leading edge devices have shrunk to 1x nm size and below, device patterns have become sensitive to sub-10nm size defects. Additionally, defectivity and yield are now increasingly dominated by systematic patterning defects. A method for identifying and inspecting these hot spot (HS) locations is necessary for both technology development and High Volume Manufacturing (HVM). In order to achieve sufficient statistical significance across the wafer for a specific product and layer, a guided, high-speed e-beam inspection system is needed to cover a significant amount of high-volume hot spot locations for process window monitoring. In this paper, we explore the capabilities of a novel, highthroughput e-beam hot spot inspection tool, SkyScanTM 5000, on a 10nm back-end-of-line (BEOL) wafer patterned using a triple lithography-etch process. ASML’s high-resolution, design-aware computational hot spot inspection is used to identify relevant hot spot locations, including overlay-sensitive patterns. We guide the e-beam tool to these Points of Interest (POI) and obtain experimental data from inspection of 430k wafer locations. The large amount of data allows detection of wafer-level and intra-field defect signatures for a large number of hot spot patterns.

Paper Details

Date Published: 24 March 2016
PDF: 8 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97783F (24 March 2016); doi: 10.1117/12.2219515
Show Author Affiliations
Fei Wang, Hermes Microvision Inc. (United States)
Pengcheng Zhang, Hermes Microvision Inc. (United States)
Wei Fang, Hermes Microvision Inc. (United States)
Kevin Liu, Hermes Microvision Inc. (United States)
Jack Jau, Hermes Microvision Inc. (United States)
Lester Wang, ASML/Brion Technologies (United States)
Alex Wan, ASML/Brion Technologies (United States)
Stefan Hunsche, ASML/Brion Technologies (United States)
Sandip Halder, imec (Belgium)
Philippe Leray, imec (Belgium)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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