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Proceedings Paper

Approach to hp10nm resolution by applying Dry Development Rinse Process (DDRP) and Materials (DDRM)
Author(s): Wataru Shibayama; Shuhei Shigaki; Satoshi Takeda; Ryuji Onishi; Makoto Nakajima; Rikimaru Sakamoto
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Paper Abstract

EUV lithography has been desired as the leading technology for single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off is the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) and Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we especially propose new approaches to achieve high resolution around hp10nm. The key points of our concepts are 1) control PR profiles, 2) new solvent system to avoid chemical mixture, 3) high etching selective DDR materilas and 4) high planar DDR materials. This new DDRM technology can be the promising approach for hp10nm level patterning in N7/N5 and beyond.

Paper Details

Date Published: 18 March 2016
PDF: 10 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977609 (18 March 2016); doi: 10.1117/12.2219475
Show Author Affiliations
Wataru Shibayama, Nissan Chemical Industries, Ltd. (Japan)
Shuhei Shigaki, Nissan Chemical Industries, Ltd. (Japan)
Satoshi Takeda, Nissan Chemical Industries, Ltd. (Japan)
Ryuji Onishi, Nissan Chemical Industries, Ltd. (Japan)
Makoto Nakajima, Nissan Chemical Industries, Ltd. (Japan)
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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