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Proceedings Paper

LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL)
Author(s): Nihar Mohanty; Richard Farrell; Cheryl Periera; Kal Subhadeep; Elliott Franke; Jeffrey Smith; Akiteru Ko; Anton DeVilliers; Peter Biolsi; Lei Sun; Genevieve Beique; Erik Hosler; Erik Verdujn; Wenhui Wang; Cathy Labelle; Ryoung-han Kim
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Paper Abstract

Critical back end of line (BEOL) Mx patterning at 7nm technology node and beyond requires sub-36nm pitch line/space pattern in order to meet the scaling requirements. This small pitch can be achieved by either extreme ultraviolet (EUV) lithography or 193nm-immersion-lithography based self-aligned quadruple patterning (SAQP). With enormous challenges being faced in production readiness of EUV lithography, SAQP is expected to be the front up approach for Mx grid patterning for most of industry. In contrast to the front end of line (FEOL) fin patterning, which has successfully deployed SAQP approach since 10nm node technology, BEOL Mx SAQP is challenging owing to the required usage of significantly lower temperature budgets for film stack deposition. This has an adverse impact on the material properties of the as-deposited films leading to emergence of several challenges for etch including selectivity, uniformity and roughness. In this presentation we will highlight those unique etch challenges associated with our BEOL Mx SAQP patterning strategy and summarize our efforts in optimizing the patterning stack, etch chemistries & process steps for meeting the 7nm technology node targets. We will present comparison data on both organic and in-organic mandrel stacks with respect to LER/LWR & CDU. With LER being one of the most critical targets for 7nm BEOL Mx, we will outline our actions for optimization of our stack including resist material, mandrel material, spacer material and others. Finally, we would like to update our progress on achieving the target LER of 1.5 nm for 32nm pitch BEOL SAQP pattern.

Paper Details

Date Published: 24 March 2016
PDF: 15 pages
Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820Q (24 March 2016); doi: 10.1117/12.2219259
Show Author Affiliations
Nihar Mohanty, TEL Technology Ctr., America, LLC (United States)
Richard Farrell, TEL Technology Ctr., America, LLC (United States)
Cheryl Periera, TEL Technology Ctr., America, LLC (United States)
Kal Subhadeep, TEL Technology Ctr., America, LLC (United States)
Elliott Franke, TEL Technology Ctr., America, LLC (United States)
Jeffrey Smith, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)
Anton DeVilliers, TEL Technology Ctr., America, LLC (United States)
Peter Biolsi, TEL Technology Ctr., America, LLC (United States)
Lei Sun, GLOBALFOUNDRIES Inc. (United States)
Genevieve Beique, GLOBALFOUNDRIES Inc. (United States)
Erik Hosler, GLOBALFOUNDRIES Inc. (United States)
Erik Verdujn, GLOBALFOUNDRIES Inc. (United States)
Wenhui Wang, GLOBALFOUNDRIES Inc. (United States)
Cathy Labelle, GLOBALFOUNDRIES Inc. (United States)
Ryoung-han Kim, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 9782:
Advanced Etch Technology for Nanopatterning V
Qinghuang Lin; Sebastian U. Engelmann, Editor(s)

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