Share Email Print
cover

Proceedings Paper

Helium ion beam lithography (HIBL) using HafSOx as the resist
Author(s): Feixiang Luo; Viacheslav Manichev; Mengjun Li; Gavin Mitchson; Boris Yakshinskiy; Torgny Gustafsson; David Johnson; Eric Garfunkel
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4–2x−2y(O2)x(SO4)y·qH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ~ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions’ energy loss.

Paper Details

Date Published: 21 March 2016
PDF: 9 pages
Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977928 (21 March 2016); doi: 10.1117/12.2219239
Show Author Affiliations
Feixiang Luo, Rutgers Univ. (United States)
Viacheslav Manichev, Rutgers Univ. (United States)
Mengjun Li, Rutgers Univ. (United States)
Gavin Mitchson, Univ. of Oregon (United States)
Boris Yakshinskiy, Rutgers Univ. (United States)
Torgny Gustafsson, Rutgers Univ. (United States)
David Johnson, Univ. of Oregon (United States)
Eric Garfunkel, Rutgers Univ. (United States)


Published in SPIE Proceedings Vol. 9779:
Advances in Patterning Materials and Processes XXXIII
Christoph K. Hohle; Rick Uchida, Editor(s)

© SPIE. Terms of Use
Back to Top