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Proceedings Paper

Strategies to enable directed self-assembly contact hole shrink for tight pitches
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Paper Abstract

In recent years major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCP). DSA is now widely regarded as a leading complementary patterning technique for future node integrated circuit (IC) device manufacturing and is considered for the 7 nm node. One of the most straightforward approaches for implementation of DSA is via patterning by graphoepitaxy. In this approach, the guiding pattern dictates the location and pitch of the resulting hole structures while the material properties of the BCP control the feature size and uniformity. Tight pitches need to be available for a successful implementation of DSA for future node via patterning which requires DSA in small guiding pattern CDs. Here, we show strategies how to enable the desired CD shrink in these small guiding pattern vias by utilizing high χ block copolymers and/or controlling the surface properties of the template, i.e. sidewall and bottom affinity to the blocks.

Paper Details

Date Published: 1 April 2016
PDF: 10 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771U (1 April 2016); doi: 10.1117/12.2219213
Show Author Affiliations
Kristin Schmidt, IBM Research - Almaden (United States)
Hitoshi Osaki, JSR Micro, Inc. (United States)
Kota Nishino, JSR Micro, Inc. (United States)
Martha Sanchez, IBM Research - Almaden (United States)
Chi-Chun Liu, IBM Albany Nanotech (United States)
Tsuyoshi Furukawa, JSR Micro, Inc. (United States)
Cheng Chi, IBM Albany Nanotech (United States)
Jed Pitera, IBM Research - Almaden (United States)
Nelson Felix, IBM Albany Nanotech (United States)
Daniel Sanders, IBM Research - Almaden (United States)


Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

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