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Proceedings Paper

Native conflict awared layout decomposition in triple patterning lithography using bin-based library matching method
Author(s): Xianhua Ke; Hao Jiang; Wen Lv; Shiyuan Liu
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Paper Abstract

Triple patterning (TP) lithography becomes a feasible technology for manufacturing as the feature size further scale down to sub 14/10 nm. In TP, a layout is decomposed into three masks followed with exposures and etches/freezing processes respectively. Previous works mostly focus on layout decomposition with minimal conflicts and stitches simultaneously. However, since any existence of native conflict will result in layout re-design/modification and reperforming the time-consuming decomposition, the effective method that can be aware of native conflicts (NCs) in layout is desirable. In this paper, a bin-based library matching method is proposed for NCs detection and layout decomposition. First, a layout is divided into bins and the corresponding conflict graph in each bin is constructed. Then, we match the conflict graph in a prebuilt colored library, and as a result the NCs can be located and highlighted quickly.

Paper Details

Date Published: 15 March 2016
PDF: 7 pages
Proc. SPIE 9780, Optical Microlithography XXIX, 97801F (15 March 2016); doi: 10.1117/12.2219144
Show Author Affiliations
Xianhua Ke, Huazhong Univ. of Science and Technology (China)
Hao Jiang, Huazhong Univ. of Science and Technology (China)
Wen Lv, Huazhong Univ. of Science and Technology (China)
Shiyuan Liu, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9780:
Optical Microlithography XXIX
Andreas Erdmann; Jongwook Kye, Editor(s)

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