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Proceedings Paper

Integrated routing and fill for self-aligned double patterning (SADP) using grid-based design
Author(s): Youngsoo Song; Jeemyung Lee; Seongmin Lee; Youngsoo Shin
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Paper Abstract

Self-aligned double patterning (SADP) has been proposed as an alternative patterning solution for sub-10nm technology because of delay of advanced lithography beyond 193nm ArF. In conventional SADP, line and space style of dummy metal fills are inserted once main design is complete. A large buffer distance is required around the main design because no further verification of main design (in presence of fills) is performed. This causes irregular pattern density, which becomes a source of process variations. We propose integrated-fill, in which main design and dummy fill insertion are performed together. This requires a change in overall design flow, which we discuss. Integrated-fill is demonstrated in M2 layer of SADP process; M2 density increases by 15.7% with 2.3% reduction in standard deviation of density distribution; metal thickness variation is also reduced by 24%. More dummy fills cause increased coupling capacitance, which however is shown to be insignificant.

Paper Details

Date Published: 16 March 2016
PDF: 8 pages
Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 978105 (16 March 2016); doi: 10.1117/12.2219142
Show Author Affiliations
Youngsoo Song, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
KAIST (Korea, Republic of)
Jeemyung Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seongmin Lee, KAIST (Korea, Republic of)
Youngsoo Shin, KAIST (Korea, Republic of)


Published in SPIE Proceedings Vol. 9781:
Design-Process-Technology Co-optimization for Manufacturability X
Luigi Capodieci, Editor(s)

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