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Proceedings Paper

Scatterometry-based process control for nanoimprint lithography
Author(s): Masafumi Asano; Hirotaka Tsuda; Motofumi Komori; Kazuto Matsuki; Hideaki Abe; Woo-Yung Jung
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Paper Abstract

In principal, the critical dimension (CD) of Nanoimprint lithography (NIL) pattern is determined by the CD of the template pattern. Unless one template is changed to another, NIL does not have a knob for direct control of the CD, such as the exposure dose and focus in optical lithography. Alternatively, the CD would be controlled by adjusting the thickness of the residual layer underneath the NIL pattern and controlling the etching process to transfer the pattern to a substrate. Controlling the residual layer thickness (RLT) can change the etching bias, resulting in the control of the CD of etched pattern. RLT is controllable by the resist dispense condition of the inkjet. For CD control, the metrology of RLT and feedback of the results to the dispense condition are extremely important. Scatterometry is the most promising metrology for the task because it is nondestructive 3D metrology with high throughput. In this paper, we discuss how to control CD in the NIL process and propose a process control flow based on scatterometry.

Paper Details

Date Published: 8 March 2016
PDF: 4 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977820 (8 March 2016); doi: 10.1117/12.2218994
Show Author Affiliations
Masafumi Asano, Toshiba Corp. (Japan)
Hirotaka Tsuda, Toshiba Corp. (Japan)
Motofumi Komori, Toshiba Corp. (Japan)
Kazuto Matsuki, Toshiba Corp. (Japan)
Hideaki Abe, Toshiba Corp. (Japan)
Woo-Yung Jung, SK hynix, Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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