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Proceedings Paper

Electromagnetic field modeling for defect detection in 7 nm node patterned wafers
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Paper Abstract

By 2017, the critical dimension in patterned wafers will shrink down to 7 nm, which brings great challenges to optics-based defect inspection techniques, due to the ever-decreasing signal to noise ratio with respect to defect size. To continue pushing forward the optics-based metrology technique, it is of great importance to analyze the full characteristics of the scattering field of a wafer with a defect and then to find the most sensitive signal type. In this article, the vector boundary element method is firstly introduced to calculate the scattering field of a patterned wafer at a specific objective plane, after which a vector imaging theory is introduced to calculate the field at an image plane for an imaging system with a high numerical aperture objective lens. The above methods enable the effective modeling of the image for an arbitrary vectorial scattering electromagnetic field coming from the defect pattern of the wafer.

Paper Details

Date Published: 8 March 2016
PDF: 9 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780P (8 March 2016); doi: 10.1117/12.2218979
Show Author Affiliations
Jinlong Zhu, Univ. of Illinois at Urbana-Champaign (United States)
Kedi Zhang, Univ. of Illinois at Urbana-Champaign (United States)
Nima Davoudzadeh, Univ. of Illinois at Urbana-Champaign (United States)
Xiaozhen Wang, Univ. of Illinois at Urbana-Champaign (United States)
Lynford L. Goddard, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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