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Proceedings Paper

Identification of multilayer structures using secondary electron yield curves: effect of native oxide films on EUV-patterned mask inspection
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Paper Abstract

The impact of EUV mask surface conditions on the patterned mask inspection process was investigated. The results of simulations show that the defect detection capability is degraded by the formation of a native oxide film on the surface of a Ru capped multilayer. This effect was assessed by constructing the secondary electron yield (SEY) curves of the EUV mask materials. These experimentally-obtained SEY curves were examined using semi-empirical Monte Carlo simulations. The simulation results demonstrated that a native oxide film increased the SEY, and that this effect varied with film thickness. The results suggest that defect detection capability will vary according to the thickness of the native oxide when employing an inspection system using an electron beam technique. Also of interest is the finding that the thickness of the native oxide film can be ascertained by fitting the SEY curves.

Paper Details

Date Published: 24 March 2016
PDF: 7 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977817 (24 March 2016); doi: 10.1117/12.2218944
Show Author Affiliations
Susumu Iida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Kaoru Ohya, The Univ. of Tokushima (Japan)
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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