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Proceedings Paper

Update on EUV radiometry at PTB
Author(s): Christian Laubis; Annett Barboutis; Christian Buchholz; Andreas Fischer; Anton Haase; Florian Knorr; Heiko Mentzel; Jana Puls; Anja Schönstedt; Michael Sintschuk; Victor Soltwisch; Christian Stadelhoff; Frank Scholze
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Paper Abstract

The development of technology infrastructure for EUV Lithography (EUVL) still requires higher levels of technology readiness in many fields. A large number of new materials will need to be introduced. For example, development of EUV compatible pellicles to adopt an approved method from optical lithography for EUVL needs completely new thin membranes which have not been available before. To support these developments, PTB with its decades of experience [1] in EUV metrology [2] provides a wide range of actinic and non actinic measurements at in-band EUV wavelengths as well as out of band. Two dedicated, complimentary EUV beamlines [3] are available for radiometric [4,5] characterizations benefiting from small divergence or from adjustable spot size respectively. The wavelength range covered reaches from below 1 nm to 45 nm [6] for the EUV beamlines [7] to longer wavelengths if in addition the VUV beamline is employed. The standard spot size is 1 mm by 1 mm with an option to go as low as 0.1 mm to 0.1 mm. A separate beamline offers an exposure setup. Exposure power levels of 20 W/cm2 have been employed in the past, lower fluencies are available by attenuation or out of focus exposure. Owing to a differential pumping stage, the sample can be held under defined gas conditions during exposure. We present an updated overview on our instrumentation and analysis capabilities for EUV metrology and provide data for illustration.

Paper Details

Date Published: 18 March 2016
PDF: 8 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977627 (18 March 2016); doi: 10.1117/12.2218902
Show Author Affiliations
Christian Laubis, Physikalisch-Technische Bundesanstalt (Germany)
Annett Barboutis, Physikalisch-Technische Bundesanstalt (Germany)
Christian Buchholz, Physikalisch-Technische Bundesanstalt (Germany)
Andreas Fischer, Physikalisch-Technische Bundesanstalt (Germany)
Anton Haase, Physikalisch-Technische Bundesanstalt (Germany)
Florian Knorr, Physikalisch-Technische Bundesanstalt (Germany)
Heiko Mentzel, Physikalisch-Technische Bundesanstalt (Germany)
Jana Puls, Physikalisch-Technische Bundesanstalt (Germany)
Anja Schönstedt, Physikalisch-Technische Bundesanstalt (Germany)
Michael Sintschuk, Physikalisch-Technische Bundesanstalt (Germany)
Victor Soltwisch, Physikalisch-Technische Bundesanstalt (Germany)
Christian Stadelhoff, Physikalisch-Technische Bundesanstalt (Germany)
Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)

Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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