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Proceedings Paper

Automated klarf-based defect inspection by electron-beam inspection tool: a novel approach to inline monitoring and/or process change validation
Author(s): Na Cai; Xuefeng Zeng; Kevin Wu; Ho Young Song; Weihong Gao; Qing Tian; Chris Lei; Kewen Gao; Liuchen Wang; Yan Zhao
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Paper Abstract

We report an optical inspection guided e-beam inspection method for inline monitoring and/or process change validation. We illustrate its advantage through the case of detection of buried voids/unlanding vias, which are identified as yield-limiting defects to cause electrical connectivity failures. We inspected a back end of line (BEOL) wafer after the copper electro plating and chemical mechanical planarization (CMP) process with bright field inspection (BFI) and employed EBI to inspect full wafer with guidance of BFI klarf file. The dark voltage contrast defects were detected and confirmed as buried voids by transmission electron microscopy (TEM).

Paper Details

Date Published: 12 April 2016
PDF: 6 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977834 (12 April 2016); doi: 10.1117/12.2218887
Show Author Affiliations
Na Cai, GLOBALFOUNDRIES Inc. (United States)
Xuefeng Zeng, GLOBALFOUNDRIES Inc. (United States)
Kevin Wu, GLOBALFOUNDRIES Inc. (United States)
Ho Young Song, GLOBALFOUNDRIES Inc. (United States)
Weihong Gao, GLOBALFOUNDRIES Inc. (United States)
Qing Tian, Hermes Microvision Inc. (United States)
Chris Lei, Hermes Microvision Inc. (United States)
Kewen Gao, Hermes Microvision Inc. (United States)
Liuchen Wang, Hermes Microvision Inc. (United States)
Yan Zhao, Hermes Microvision Inc. (United States)

Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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