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Proceedings Paper

EUV process establishment through litho and etch for N7 node
Author(s): Yuhei Kuwahara; Shinichiro Kawakami; Minoru Kubota; Koichi Matsunaga; Kathleen Nafus; Philippe Foubert; Ming Mao
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Paper Abstract

Extreme ultraviolet lithography (EUVL) technology is steadily reaching high volume manufacturing for 16nm half pitch node and beyond. However, some challenges, for example scanner availability and resist performance (resolution, CD uniformity (CDU), LWR, etch behavior and so on) are remaining. Advance EUV patterning on the ASML NXE:3300/ CLEAN TRACK LITHIUS Pro Z- EUV litho cluster is launched at imec, allowing for finer pitch patterns for L/S and CH. Tokyo Electron Ltd. and imec are continuously collabo rating to develop manufacturing quality POR processes for NXE:3300. TEL’s technologies to enhance CDU, defectivity and LWR/LER can improve patterning performance. The patterning is characterized and optimized in both litho and etch for a more complete understanding of the final patterning performance. This paper reports on post-litho CDU improvement by litho process optimization and also post-etch LWR reduction by litho and etch process optimization.

Paper Details

Date Published: 18 March 2016
PDF: 7 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760C (18 March 2016); doi: 10.1117/12.2218885
Show Author Affiliations
Yuhei Kuwahara, Tokyo Electron Kyushu Ltd. (Belgium)
Shinichiro Kawakami, Tokyo Electron Kyushu Ltd. (Japan)
Minoru Kubota, Tokyo Electron Kyushu Ltd. (Japan)
Koichi Matsunaga, Tokyo Electron Kyushu Ltd. (Japan)
Kathleen Nafus, Tokyo Electron Kyushu Ltd. (Japan)
Philippe Foubert, IMEC (Belgium)
Ming Mao, IMEC (Belgium)


Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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