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Proceedings Paper

Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process
Author(s): Gian Francesco Lorusso; Osamu Inoue; Takeyoshi Ohashi; Efrain Altamirano Sanchez; Vassilios Constantoudis; Shunsuke Koshihara
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Paper Abstract

Line edge roughness (LER) and line width roughness (LWR) are analyzed during pattern transfer in a self-aligned quadruple patterning (SAQP) process. This patterning process leads to a final pitch of 22.5nm, relevant for N7/N5 technologies. Measurements performed by CD SEM (Critical Dimension Scanning Electron Microscope) using different settings in terms of averaging, field of view, and pixel size are compared with reference metrology performed by planar TEM and three-Dimensional Atomic Force Microscope (3D AFM) for each patterning process step in order to investigate the optimal condition for an in-line LWR characterization. Pattern wiggling is als0 quantitatively analyzed during LER/LWR transfer in the SAQP process.

Paper Details

Date Published: 18 March 2016
PDF: 8 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780V (18 March 2016); doi: 10.1117/12.2218863
Show Author Affiliations
Gian Francesco Lorusso, IMEC (Belgium)
Osamu Inoue, Hitachi High-Technology Corp. (Japan)
Takeyoshi Ohashi, Hitachi Ltd. (Japan)
Efrain Altamirano Sanchez, IMEC (Belgium)
Vassilios Constantoudis, NCSR Demokritos (Greece)
Nanometrisis P.C. (Greece)
Shunsuke Koshihara, Hitachi Ltd. (Japan)

Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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