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Proceedings Paper

Enhanced patterning by tilted ion implantation
Author(s): Sang Wan Kim; Peng Zheng; Kimihiko Kato; Leonard Rubin; Tsu-Jae King Liu
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Paper Abstract

Tilted ion implantation (TII) is proposed as a lower-cost alternative to self-aligned double patterning (SADP) for pitch halving. This new approach is based on an enhancement in etch rate of a hard-mask layer by implant-induced damage. Ar+ implantation into a thin layer of silicon dioxide (SiO2) is shown to enhance its etch rate in dilute hydrofluoric acid (HF) solution, by up to 9× for an implant dose of 3×1014 cm-2. The formation of sub-lithographic features defined by masked tilted Ar+ implantation into a SiO2 hard-mask layer is experimentally demonstrated. Features with sizes as small as ~21 nm, self-aligned to the lithographically patterned mask, are achieved. As compared with SADP, enhanced patterning by TII requires far fewer and lower-cost process steps and hence is expected to be much more cost-effective.

Paper Details

Date Published: 22 March 2016
PDF: 6 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771B (22 March 2016); doi: 10.1117/12.2218793
Show Author Affiliations
Sang Wan Kim, Univ. of California, Berkeley (United States)
Peng Zheng, Univ. of California, Berkeley (United States)
Kimihiko Kato, Univ. of California, Berkeley (United States)
Leonard Rubin, Axcelis Technologies, Inc. (United States)
Tsu-Jae King Liu, Univ. of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

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