Share Email Print
cover

Proceedings Paper

Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer
Author(s): Hironobu Sato; Yusuke Kasahara; Naoko Kihara; Yuriko Seino; Ken Miyagi; Shinya Minegishi; Hitoshi Kubota; Katsutoshi Kobayashi; Hideki Kanai; Katsuyoshi Kodera; Yoshiaki Kawamonzen; Masayuki Shiraishi; Hitoshi Yamano; Satoshi Nomura; Tsukasa Azuma; Teruaki Hayakawa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Si-rich poly((polyhedral oligomeric silsesquioxane) methacrylate)-b-poly(trifluoroethyl methacrylate) (PMAPOSS-b- PTFEMA) was used to form 8-nm half-pitch line and space (L/S) pattern via grapho-epitaxy. Vertical alignment of the lamellae was achieved without using either a neutral layer or top-coating material. Because PMAPOSS-b-PTFEMA forms vertical lamellae on a variety of substrates, we used two types of physical guide structures for grapho-epitaxy; one was a substrate guide and the other was a guide with an embedded under layer. On the substrate guide structure, a fine L/S pattern was obtained with trench widths equal to 3–7 periods of the lamella spacing of the block copolymer, Lo. However, on the embedded under layer guide structure, L/S pattern was observed only with 3 Lo and 4 Lo in trench width. Cross-sectional transmission electron microscope images revealed that a thick PMAPOSS layer was formed under the PMAPOSS-b-PTFEMA L/S pattern. Pattern transfer of the PMAPOSS-b-PTFEMA L/S pattern was prevented by a thick PMAPOSS layer. To achieve pattern transfer to the under layer, optimization of the surface properties is necessary.

Paper Details

Date Published: 1 April 2016
PDF: 6 pages
Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771S (1 April 2016); doi: 10.1117/12.2218758
Show Author Affiliations
Hironobu Sato, EUVL Infrastructure Development Ctr., Inc. (Japan)
Yusuke Kasahara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Naoko Kihara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Yuriko Seino, EUVL Infrastructure Development Ctr., Inc. (Japan)
Ken Miyagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Shinya Minegishi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hitoshi Kubota, EUVL Infrastructure Development Ctr., Inc. (Japan)
Katsutoshi Kobayashi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hideki Kanai, EUVL Infrastructure Development Ctr., Inc. (Japan)
Katsuyoshi Kodera, EUVL Infrastructure Development Ctr., Inc. (Japan)
Yoshiaki Kawamonzen, EUVL Infrastructure Development Ctr., Inc. (Japan)
Masayuki Shiraishi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hitoshi Yamano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Satoshi Nomura, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsukasa Azuma, EUVL Infrastructure Development Ctr., Inc. (Japan)
Teruaki Hayakawa, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 9777:
Alternative Lithographic Technologies VIII
Christopher Bencher, Editor(s)

© SPIE. Terms of Use
Back to Top