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Proceedings Paper

Oblique incidence scatterometry for 2D/3D isolation mounts with RCWA and PML
Author(s): Hirokimi Shirasaki
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Paper Abstract

In this paper, we examine the sensitivity of scatterometry for the 2D and 3D isolation mounts on the substrate by applying the PML in the RCWA method. We analyze the reflectance from the silicon and resist single mount on the silicon substrates by changing the incident beam angles. First, we show the propagation properties of the electromagnetic fields propagating for the isolation mounts on the silicon substrates. Second, we examine the oblique incident reflectances for the TE and TM waves by changing the beam sizes and wavelengths. We show the reflectance properties by changing the mount length, width and height on the Si substrates. Finally, we examine the reflectances calculated by changing the wavelength for the oblique incident beams. Then, we understand that the scatterometry observation is possible for isolation mounts.

Paper Details

Date Published: 18 March 2016
PDF: 7 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977821 (18 March 2016); doi: 10.1117/12.2218732
Show Author Affiliations
Hirokimi Shirasaki, Tamagawa Univ. (Japan)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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