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Proceedings Paper

Design technology co-optimization for 14/10nm metal1 double patterning layer
Author(s): Yingli Duan; Xiaojing Su; Ying Chen; Yajuan Su; Feng Shao; Recco Zhang; Junjiang Lei; Yayi Wei
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Paper Abstract

Design and technology co-optimization (DTCO) can satisfy the needs of the design, generate robust design rule, and avoid unfriendly patterns at the early stage of design to ensure a high level of manufacturability of the product by the technical capability of the present process. The DTCO methodology in this paper includes design rule translation, layout analysis, model validation, hotspots classification and design rule optimization mainly. The correlation of the DTCO and double patterning (DPT) can optimize the related design rule and generate friendlier layout which meets the requirement of the 14/10nm technology node. The experiment demonstrates the methodology of DPT-compliant DTCO which is applied to a metal1 layer from the 14/10nm node. The DTCO workflow proposed in our job is an efficient solution for optimizing the design rules for 14/10 nm tech node Metal1 layer. And the paper also discussed and did the verification about how to tune the design rule of the U-shape and L-shape structures in a DPT-aware metal layer.

Paper Details

Date Published: 16 March 2016
PDF: 13 pages
Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810X (16 March 2016); doi: 10.1117/12.2218711
Show Author Affiliations
Yingli Duan, Institute of Microelectronics (China)
Xiaojing Su, Institute of Microelectronics (China)
Ying Chen, Institute of Microelectronics (China)
Yajuan Su, Institute of Microelectronics (China)
Feng Shao, Mentor Graphics Shanghai Electronic Technology Co. (China)
Recco Zhang, Mentor Graphics Shanghai Electronic Technology Co. (China)
Junjiang Lei, Mentor Graphics Shanghai Electronic Technology Co. (China)
Yayi Wei, Institute of Microelectronics (China)


Published in SPIE Proceedings Vol. 9781:
Design-Process-Technology Co-optimization for Manufacturability X
Luigi Capodieci, Editor(s)

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