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Proceedings Paper

Recent progress in nanoparticle photoresists development for EUV lithography
Author(s): Kazuki Kasahara; Vasiliki Kosma; Jeremy Odent; Hong Xu; Mufei Yu; Emmanuel P. Giannelis; Christopher K. Ober
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Paper Abstract

Extreme ultraviolet (EUV) lithography is a promising candidate for next generation lithography. For high volume manufacturing of semiconductor devices, significant improvement of resolution and sensitivity is required for successful implementation of EUV resists. Performance requirements for such resists demand the development of entirely new resist platforms. Cornell University has intensely studied metal oxide nanoparticle photoresists with high sensitivity for EUV lithography applications. Zirconium oxide nanoparticles with PAG enabling sub 30nm line negative tone patterns at an EUV dose below 5 mJ/cm2 show one of the best EUV sensitivity results ever reported. In this paper, recent progress in metal oxide nanoparticle photoresist research will be discussed. Several studies regarding composition investigation and new metal element study are reported.

Paper Details

Date Published: 18 March 2016
PDF: 6 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977604 (18 March 2016); doi: 10.1117/12.2218704
Show Author Affiliations
Kazuki Kasahara, Cornell Univ. (United States)
JSR Corp. (Japan)
Vasiliki Kosma, Cornell Univ. (United States)
Jeremy Odent, Cornell Univ. (United States)
Hong Xu, Cornell Univ. (United States)
Mufei Yu, Cornell Univ. (United States)
Emmanuel P. Giannelis, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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