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Proceedings Paper

Patterned semiconductor inverted quantum dot photonic devices
Author(s): J. J. Coleman
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Paper Abstract

A novel inverted quantum dot structure is presented, which consists of an InGaAs quantum well that has been periodically perforated and then filled with the higher bandgap GaAs barrier material. This structure exhibits a unique quantized energy structure something like a planar atomic bond structure and formation of allowed and forbidden energy bands instead of highly localized, fully discrete states. We describe the growth, processing and characteristics of inverted quantum dot structures and outline interesting and potentially important effects arising from the introduction of nanoscale features (<50 nm) in the active medium.

Paper Details

Date Published: 3 March 2016
PDF: 6 pages
Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510N (3 March 2016); doi: 10.1117/12.2218556
Show Author Affiliations
J. J. Coleman, The Univ. of Texas at Dallas (United States)

Published in SPIE Proceedings Vol. 9751:
Smart Photonic and Optoelectronic Integrated Circuits XVIII
Sailing He; El-Hang Lee; Louay A. Eldada, Editor(s)

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