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Proceedings Paper

450mm etch process development and process chamber evaluation using 193i DSA guided pattern
Author(s): Wenli Collison; Yii-Cheng Lin; Shannon Dunn; Hiroaki Takikawa; James Paris; Lucy Chen; Troy Detrick; Jun Belen; George Stojakovic; Michael Goss; Norman Fish; Minjoon Park; Chih-Ming Sun; Mark Kelling; Pinyen Lin
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Paper Abstract

In the Global 450mm Equipment Development Consortium (G450C), a 193i guided directed self-assembly (DSA) pattern has been used to create structures at the 14nm node and below. The first guided DSA patterned wafer was ready for etch process development within a month of the G450C’s first 193i patterned wafer availability with one litho pass. Etch processes were scaled up from 300mm to 450mm for a 28nm pitch STI stack and a 40nm pitch M1 BEOL stack. The effects of various process parameters were investigated to fine tune each process. Overall process window has been checked and compared. Excellent process stability results were shown for current etch chambers.

Paper Details

Date Published: 23 March 2016
PDF: 14 pages
Proc. SPIE 9782, Advanced Etch Technology for Nanopatterning V, 97820M (23 March 2016); doi: 10.1117/12.2218537
Show Author Affiliations
Wenli Collison, Global 450 Consortium (G450C) (United States)
SUNY Polytechnic Institute (United States)
Yii-Cheng Lin, Global 450 Consortium (G450C) (United States)
TSMC (Taiwan)
Shannon Dunn, Global 450 Consortium (G450C) (United States)
SUNY Polytechnic Institute (United States)
Hiroaki Takikawa, Global 450 Consortium (G450C) (United States)
Hitachi High-Technologies Corp. (Japan)
James Paris, Global 450 Consortium (G450C) (United States)
Hitachi High-Technologies Corp. (Japan)
Lucy Chen, Global 450 Consortium (G450C) (United States)
Applied Materials, Inc. (United States)
Troy Detrick, Global 450 Consortium (G450C) (United States)
Applied Materials, Inc. (United States)
Jun Belen, Global 450 Consortium (G450C) (United States)
Lam Research Corp. (United States)
George Stojakovic, Global 450 Consortium (G450C) (United States)
Lam Research Corp. (United States)
Michael Goss, Global 450 Consortium (G450C) (United States)
Lam Research Corp. (United States)
Norman Fish, Global 450 Consortium (G450C) (United States)
Intel Corp. (United States)
Minjoon Park, Global 450 Consortium (G450C) (United States)
SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chih-Ming Sun, Global 450 Consortium (G450C) (United States)
TSMC (Taiwan)
Mark Kelling, Global 450 Consortium (G450C) (United States)
GLOBALFOUNDRIES Inc. (United States)
Pinyen Lin, Global 450 Consortium (G450C) (United States)
TSMC (Taiwan)


Published in SPIE Proceedings Vol. 9782:
Advanced Etch Technology for Nanopatterning V
Qinghuang Lin; Sebastian U. Engelmann, Editor(s)

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