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Proceedings Paper

Modeling metrology for calibration of OPC models
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Paper Abstract

Optical Proximity Correction (OPC) has continually improved in accuracy over the years by adding more physically based models. Here, we further extend OPC modeling by adding the Analytical Linescan Model (ALM) to account for systematic biases in CD-SEM metrology. The ALM was added to a conventional OPC model calibration flow and the accuracy of the calibrated model with the ALM was compared to the standard model without the ALM using validation data. Without using any adjustable parameters in the ALM, OPC validation accuracy was improved by 5%. While very preliminary, these results give hope that modeling metrology could be an important next step in OPC model improvement.

Paper Details

Date Published: 24 March 2016
PDF: 9 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781Q (24 March 2016); doi: 10.1117/12.2218534
Show Author Affiliations
Chris A. Mack, Lithoguru.com (United States)
Ananthan Raghunathan, Mentor Graphics (United States)
John Sturtevant, Mentor Graphics (United States)
Yunfei Deng, Mentor Graphics (United States)
Christian Zuniga, Mentor Graphics (United States)
Kostas Adam, Mentor Graphics (United States)


Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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