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Proceedings Paper

Planarization of topography with spin-on carbon hard mask
Author(s): Go Noya; Yusuke Hama; Maki Ishii; Shigemasa Nakasugi; Takanori Kudo; Munirathna Padmanaban
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Paper Abstract

Spin-on-carbon hard mask (SOC HM) has been used in semiconductor manufacturing since 45nm node as an alternative carbon hard mask process to chemical vapor deposition (CVD). As advancement of semiconductor to 2X nm nodes and beyond, multiple patterning technology is used and planarization of topography become more important and challenging ever before. In order to develop next generation SOC, one of focuses is planarization of topography. SOC with different concepts for improved planarization and the influence of thermal flow temperature, crosslink, film shrinkage, baking conditions on planarization and filling performance are described in this paper.

Paper Details

Date Published: 25 March 2016
PDF: 6 pages
Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97791I (25 March 2016); doi: 10.1117/12.2218504
Show Author Affiliations
Go Noya, Merck Performance Materials Manufacturing G.K. (Japan)
Yusuke Hama, Merck Performance Materials Manufacturing G.K. (Japan)
Maki Ishii, Merck Performance Materials Manufacturing G.K. (Japan)
Shigemasa Nakasugi, Merck Performance Materials Manufacturing G.K. (Japan)
Takanori Kudo, EMD Performance Materials Corp. (United States)
Munirathna Padmanaban, EMD Performance Materials Corp. (United States)


Published in SPIE Proceedings Vol. 9779:
Advances in Patterning Materials and Processes XXXIII
Christoph K. Hohle; Rick Uchida, Editor(s)

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