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Proceedings Paper

Improvements to the analytical linescan model for SEM metrology
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Paper Abstract

Critical dimension scanning electron microscope (CD-SEM) metrology has long used empirical approaches to determine edge locations. While such solutions are very flexible, physics-based models offer the potential for improved accuracy and precision for specific applications. Here, Monte Carlo simulation is used to generate theoretical linescans from single step and line/space targets in order to build a physics-based analytical model, including the presence of bottom footing and top corner rounding. The resulting analytical linescan model fits the Monte Carlo simulation results for different feature heights, widths, pitches, sidewall angles, bottom footing, and top corner rounding. This model has also been successfully applied to asymetric features such as sidewall spacers encountered in self-aligned double patterning.

Paper Details

Date Published: 18 March 2016
PDF: 9 pages
Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780A (18 March 2016); doi: 10.1117/12.2218443
Show Author Affiliations
Chris A. Mack, (United States)
Benjamin D. Bunday, SUNY Poly SEMATECH (United States)

Published in SPIE Proceedings Vol. 9778:
Metrology, Inspection, and Process Control for Microlithography XXX
Martha I. Sanchez, Editor(s)

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