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Proceedings Paper

Patterning performance of chemically amplified resist in EUV lithography
Author(s): Tatsuya Fujii; Shogo Matsumaru; Tomotaka Yamada; Yoshitaka Komuro; Daisuke Kawana; Katsumi Ohmori
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Paper Abstract

Extreme Ultra Violet (EUV) lithography is one of the most promising candidate technologies for the high-volume manufacturing (HVM) of semiconductor devices at the sub-14 nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. EUV resists is strongly required high resolution (R) with high sensitivity (S) and low line edge/ width roughness (L) for HVM application. Experimental results on chemically amplified (CA) resist will be shown to study the influence of proton source, photo acid generator (PAG) cation and the other materials on lithographic performance, and then resist formulation designed for improving RLS trade-off will be discussed.

Paper Details

Date Published: 18 March 2016
PDF: 6 pages
Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760Y (18 March 2016); doi: 10.1117/12.2218417
Show Author Affiliations
Tatsuya Fujii, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Shogo Matsumaru, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Tomotaka Yamada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Yoshitaka Komuro, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Daisuke Kawana, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 9776:
Extreme Ultraviolet (EUV) Lithography VII
Eric M. Panning, Editor(s)

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