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Proceedings Paper

The new analysis method of PWQ in the DRAM pattern
Author(s): Daehan Han; Jinman Chang; Taeheon Kim; Kyusun Lee; Yonghyeon Kim; Jinyoung Kang; Aeran Hong; Bumjin Choi; Joosung Lee; Hyoung Jun Kim; Kweonjae Lee; Hyoungsun Hong; Gyoyoung Jin
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Paper Abstract

In a sub 2Xnm node process, the feedback of pattern weak points is more and more significant. Therefore, it is very important to extract the systemic defect in Double Patterning Technology(DPT), however, it is impossible to predict exact systemic defect at the recent photo simulation tool.[1] Therefore, the method of Process Window Qualification (PWQ) is very serious and essential these days.

Conventional PWQ methods are die to die image comparison by using an e-beam or bright field machine. Results are evaluated by the person, who reviews the images, in some cases. However, conventional die to die comparison method has critical problem. If reference die and comparison die have same problem, such as both of dies have pattern problems, the issue patterns are not detected by current defect detecting approach. Aside from the inspection accuracy, reviewing the wafer requires much effort and time to justify the genuine issue patterns. Therefore, our company adopts die to data based matching PWQ method that is using NGR machine. The main features of the NGR are as follows. First, die to data based matching, second High speed, finally massive data were used for evaluation of pattern inspection.[2] Even though our die to data based matching PWQ method measures the mass data, our margin decision process is based on image shape. Therefore, it has some significant problems.

First, because of the long analysis time, the developing period of new device is increased. Moreover, because of the limitation of resources, it may not examine the full chip area. Consequently, the result of PWQ weak points cannot represent the all the possible defects. Finally, since the PWQ margin is not decided by the mathematical value, to make the solid definition of killing defect is impossible.

To overcome these problems, we introduce a statistical values base process window qualification method that increases the accuracy of process margin and reduces the review time. Therefore, it is possible to see the genuine margin of the critical pattern issue which we cannot see on our conventional PWQ inspection; hence we can enhance the accuracy of PWQ margin.

Paper Details

Date Published: 16 March 2016
PDF: 8 pages
Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810R (16 March 2016); doi: 10.1117/12.2218414
Show Author Affiliations
Daehan Han, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jinman Chang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Taeheon Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kyusun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yonghyeon Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jinyoung Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Aeran Hong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Bumjin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Joosung Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyoung Jun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kweonjae Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyoungsun Hong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Gyoyoung Jin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9781:
Design-Process-Technology Co-optimization for Manufacturability X
Luigi Capodieci, Editor(s)

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